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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Cardoso, S.
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Topics
Publications (10/10 displayed)
- 2022Labeling on a Chip of Cellular Fibronectin and Matrix Metallopeptidase-9 in Human Serumcitations
- 2022Seebeck effect and Joule heating in CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junctions with low resistance area productcitations
- 2020Orthorhombic GdMnO<sub>3</sub> Epitaxial Thin Film Grown onto SrTiO<sub>3</sub> (110)
- 2018All-spinel oxide Josephson junctions for high-efficiency spin filtering.
- 2017Bipolar resistive switching in Si/Ag nanostructurescitations
- 2017Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputteringcitations
- 2015Characterization tests for insulation boards made from corn cob and natural glues
- 2013Coupling and induced depinning of magnetic domain walls in adjacent spin valve nanotrackscitations
- 2011Resonant Tunneling through Electronic Trapping States in Thin MgO Magnetic Junctionscitations
- 2004Peculiar magnetic and electrical properties near structural percolation in metal-insulator granular layerscitations
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article
Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering
Abstract
The recent realization of memristors, nanodevices exhibiting non-volatile resistive switching, has sparked tremendous interest for applications in fields such as nonvolatile memories. Here we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with an oxide barrier thickness of only 15 nm. No electroforming process was required to achieve resistive switching and an ohmic conduction mechanism is associated with the ON state. We observed an inverse dependence of the ON state resistance on the SET current compliance and average values of 1.61 V and 1.38 V for the SET and RESET voltages, respectively. We show the stability of the switching for over 40 cycles and a clear separation of the ON (10(1) Omega) and OFF (10(2) Omega) states during at least 10(4) s.