• Kaloyeros, Alain
• Zhu, Yu

Abstract

<jats:p>Ultra-thin platinum films have a wide range of nanoscaleapplications including seed layer for electrochemicaldeposition of copper for integrated circuit interconnects.Atomic layer deposition of platinum provides a uniform andcontinuous conductive surface for subsequent Cuelectroplating. A thermal metal-organic atomic layerdeposition approach was developed for the growth of ultra-thinplatinum films by alternating pulses of(methylcyclopentadienyl)trimethylplatinum and oxygen. Theplatinum films were deposited in-situ on atomic layerdeposited tantalum nitride films. The ALD process wasoptimized by investigating growth rate saturation as afunction of individual reactant exposures as controlled by thelength of reactant pulses and the duration of the inert gaspurge cycles separating the reactant pulses. Subsequentelectrochemical deposition of Cu was demonstrated on ultra- thin Pt films.</jats:p>

Topics

• surface
• Oxygen
• Platinum
• nitride
• copper
• tantalum
• atomic layer deposition