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Denbaars, Steven P.
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Topics
Publications (9/9 displayed)
- 2023Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodescitations
- 2022Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices
- 2021Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction controlcitations
- 2021Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratiocitations
- 2021Damage-free substrate removal technique: wet undercut etching of semipolar 202¯1 laser structures by incorporation of un/relaxed sacrificial layer single quantum well
- 2021New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substratecitations
- 2021Highly Conductive n-Al 0.65 Ga 0.35 N Grown by MOCVD Using Low V/III Ratio
- 2020Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaNcitations
- 2012Optical Characterization of Double Peak Behavior in {10(1)over-bar1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substratescitations
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article
Optical Characterization of Double Peak Behavior in {10(1)over-bar1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates
Abstract
(10 (1) over bar1) semipolar GaN-based light-emitting diodes (LEDs) grown on 1 degrees miscut m-plane sapphires substrates via metal organic chemical vapor deposition showed undulated surface morphology with ridges and valleys. On the ridge regions, two dominant emission peaks, one at a shorter wavelength (similar to 438 nm) and one at a longer wavelength (similar to 490 nm), were observed using electroluminescence and micro-photoluminescence. In the valley regions, the longer peak was observed to be significantly quenched due to the grain boundary. The origin of the longer peak is believed to be not only inhomogeneous distribution of In composition in multiple quantum wells (MQWs) but also strong localization around the ridge region. Moreover, thickness variation of faceted MQWs could be associated with the peak broadening in {10 (1) over bar1} semipolar LEDs. The results were also confirmed by cathodoluminescence and cross-sectional transmission electron microscopy. (C) 2012 The Japan Society of Applied Physics