| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Först, M.
Max Planck Institute for the Structure and Dynamics of Matter
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2017Multiple Supersonic Phase Fronts Launched at a Complex-Oxide Heterointerfacecitations
- 2007Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and photoluminescence measurementscitations
- 2006Residual stress in Si nanocrystals embedded in a SiO2 matrixcitations
- 2006Influence of excitonic singlet-triplet splitting on the photoluminescence of Si∕SiO2 multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor depositioncitations
- 2005Fabrication of a Si∕SiO2 multiple-quantum-well light emitting diode using remote plasma enhanced chemical vapor depositioncitations
- 2000Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopycitations
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article
Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and photoluminescence measurements
Abstract
<jats:p>We investigate the influence of layer thicknesses and interface modifications on the fundamental electronic gap of Si/SiO2 multilayers by a combined ab initio calculation and photoluminescence (PL) analysis. For the band gap calculations different Si/SiO2 interface models are studied. Experimentally investigated multiple quantum wells are prepared by remote plasma-enhanced chemical vapor deposition and rapid thermal annealing. The well-width dependence of the band gap obtained from PL measurements is much weaker than found in previous studies. This sublinear variation is in accordance with simulated electronic band gaps for hydrogen-free Si/SiO2 interfaces. The presence of hydrogen at the interfaces enforces the confinement effect for the band gap. Materials involved: nanocrystalline silicon, amorphous silica, β-cristobalite silica, and Si/SiO2 interface.</jats:p>