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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Deanko, M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2007Pecularities of electrical resistivity during transformations in amorphous and nanocrystalline alloyscitations
- 2006Identification and quantification of microstructures formed during nanocrystallization of amorphous (Fe, Co)-Nb-(Si, B) systemscitations
- 2006Pecularities of nanocrystal formation in rapidly quenched (FeCo)MoCuB amorphous alloyscitations
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article
Identification and quantification of microstructures formed during nanocrystallization of amorphous (Fe, Co)-Nb-(Si, B) systems
Abstract
<p>The effect of addition of Si and variation of the Fe/Co ratio on the evolution of the nanostructure was studied in a modification of the Fe-Nb-B system. The entire system (Fe, Co)<sub>73</sub>Nb<sub>7</sub>(Si, B) <sub>20</sub> was prepared in an amorphous state by rapid quenching using the planar flow casting method over a wide range of Fe/Co atomic ratios, ranging from 0 to 1. Nanocrystallization was investigated by evolution of the electrical resistivity with time and temperature. The microstructural analysis was performed using transmission electron microscopy as well as electron and X-ray diffraction. The results from microscopy observations were used to determine the distribution of grain size, which in these alloys attain very small dimensions of ∼5-8 nm. New algorithms of microscope image analysis were used for grain size determination, crucial for quantifying the microprocesses controlling nucleation and growth from the amorphous rapidly quenched phase.</p>