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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Yang, Xinbo
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Publications (5/5 displayed)
- 2017Passivation and carrier selectivity of TiO2 contacts combined with different passivation layers and electrodes for silicon solar cellscitations
- 2015Ion-implanted laser-annealed p+ and n+ Regionscitations
- 2015Passivated contacts to laser doped p+ and n+ regionscitations
- 2014The impact of SiO2/SiNrm x stack thickness on laser doping of silicon solar cellcitations
- 2013Secondary electron microscopy dopant contrast image (SEMDCI) for laser dopingcitations
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document
Passivation and carrier selectivity of TiO2 contacts combined with different passivation layers and electrodes for silicon solar cells
Abstract
<p>Titanium dioxide (TiO<sub>2</sub>) films have previously been demonstrated to function as electron-selective contacts to silicon solar cells, and an efficiency of 21.6% has been reported for a cell featuring a full-area TiO<sub>2</sub> contact. However, the passivation quality of TiO<sub>2</sub> contacts still falls short of that possible with best-in-class contacts based on, e.g., hydrogenated amorphous silicon (a-Si:H). We investigate here the performance of a-Si:H/TiO<sub>2</sub> stacks as electron-selective, passivating contacts. We show that combining a-Si:H with TiO<sub>2</sub> can result in excellent surface passivation (lifetime close to 3 ms for textured CZ wafers), especially for 7.5-nm-thick TiO<sub>2</sub> capping layers. However, initial cell results show that such a-Si:H/TiO<sub>2</sub> stacks give poorer efficiencies than TiO<sub>2</sub> only, with extremely low fill factors due to S-shaped current-voltage curves. Also, the role of the rear electrode becomes apparent when substituting Al for an ITO/Ag stack: the latter has significantly lower open-circuit voltage and fill factor than the former. Combining a TiO<sub>2</sub>/Al rear electron contact (with no a-Si:H) and an intrinsic a-Si:H/p-type a-Si:H front hole contact, we demonstrate a double heterojunction silicon solar cell with an efficiency of approximately 15%. Furthermore, a full metal-oxide heterojunction cell that combines a molybdenum oxide (MoO<sub>x</sub>)/ITO hole contact with the TiO<sub>2</sub>/Al electron contact achieves an efficiency of 11%.</p>