| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shepherd, David P.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2018Yb-doped mixed sesquioxide thin films grown by pulsed laser depositioncitations
- 2018Towards high-power on-chip GHz frequency combs
- 2017Tailoring the refractive index of films during pulsed laser deposition growth
- 2017Pulsed laser deposition of garnets at a growth rate of 20-microns per hour
- 2016Laser performance of Yb-doped-garnet thin films grown by pulsed laser deposition
- 2016PLD growth of complex waveguide structures for applications in thin-film lasers: a 25 year retrospective
- 2016Engineered crystal layers grown by pulsed laser deposition: making bespoke planar gain-media devices
- 2016Pulsed laser deposited crystalline optical waveguides for thin-film lasing devices
- 2015Graphene Q-switched mode-locked and Q-switched ion-exchanged waveguide laserscitations
- 2015Pulsed laser-assisted fabrication of laser gain media
- 2015Towards fabrication of 10 W class planar waveguide lasers: analysis of crystalline sesquioxide layers fabricated via pulsed laser deposition
- 2014Near-infrared, mode-locked waveguide lasers with multi-GHz repetition rates
- 2014Pulsed laser deposition of thin films for optical and lasing waveguides (including tricks, tips and techniques to maximize the chances of growing what you actually want)
- 2014Graphene q-switched Yb: phosphate glass channel waveguide laser
- 2012Passively mode-locked diode-pumped monolithic channel waveguide laser with a repetition rate of 4.9 GHz
- 2008Current state-of-the-art of pulsed laser deposition of optical waveguide structures: existing capabilities and future trendscitations
- 2006Optical waveguide growth and applications
- 2004Laser operation of a low loss (0.1dB/cm) Nd:Gd3Ga5O12 thick (40 micron) planar waveguide grown by pulsed laser depositioncitations
- 2004Channel waveguide lasers in a lead silicate glass fashioned using the extrusion techniquecitations
- 2003Gain measurements at 2.8µm and fluorescence spectroscopy in Er:LaF3 waveguides fabricated by molecular beam epitaxy
- 2003Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etchingcitations
- 2002Laser-assisted microstructuring for Ti:sapphire channel-waveguide fabrication
- 2002Synchronously pumped optical parametric oscillator driven by a femtosecond mode-locked fibre lasercitations
- 2002Laser performance and spectroscopic analysis of optically written channel waveguides in neodymium-doped gallium lanthanum sulphide glasscitations
Places of action
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article
Graphene Q-switched mode-locked and Q-switched ion-exchanged waveguide lasers
Abstract
In this paper, we present the use of mono-layer graphene saturable absorbers to produce Q-switched and Q-switched mode-locked operation of Yb and Yb:Er-doped phosphate glass waveguide lasers, respectively. For the 1535-nm wavelength Yb:Er laser, the Q-switched pulses have repetition rates up to 526 kHz and contain mode-locked pulses at a repetition frequency of 6.8 GHz. The measured 0.44 nm bandwidth should allow pulses as short as ~6ps to be generated. Maximum average output powers of 27 mW are obtained at a slope efficiency of 5% in this mode of operation. For the 1057-nm-wavelength Yb laser, Q-switched pulses are obtained with a repetition rate of up to 833 kHz and a maximum average output power of 21 mW. The pulse duration is found to decrease from 292 ns to 140 ns and the pulse energy increase from 17 nJ to 27 nJ as the incident pump power increases from 220 to 652 mW.