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Buda, M.
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Topics
Publications (9/9 displayed)
- 2017The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
- 2008Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide laserscitations
- 2007Modeling and characterization of InAsGaAs quantum dot lasers grown using metal organic chemical vapor depositioncitations
- 2006Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixingcitations
- 2006Effect of rapid thermal annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs quantum well laser structurescitations
- 2004Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot laserscitations
- 2003Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetectorcitations
- 2003Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure designcitations
- 2003Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridgecitations
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article
Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot lasers
Abstract
<p>Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.</p>