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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Denbaars, Steven P.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodescitations
- 2022Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices
- 2021Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction controlcitations
- 2021Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratiocitations
- 2021Damage-free substrate removal technique: wet undercut etching of semipolar 202¯1 laser structures by incorporation of un/relaxed sacrificial layer single quantum well
- 2021New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substratecitations
- 2021Highly Conductive n-Al 0.65 Ga 0.35 N Grown by MOCVD Using Low V/III Ratio
- 2020Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaNcitations
- 2012Optical Characterization of Double Peak Behavior in {10(1)over-bar1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substratescitations
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document
Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices
Abstract
This Special Issue of the IEEE Journal of Quantum Electronics on Semiconductor Optoelectronic Materials and Devices is dedicated to Professor P. Daniel Dapkus and the impact he has had in the development of metal organic chemical vapor deposition (MOCVD) for the growth and manufacture of advanced photonic devices. Professor Dapkus has focused his career activities on the research and development of photonic materials and devices including semiconductor lasers, LEDs, solar cells and detectors. While at Rockwell International, he led the group that demonstrated the potential and viability of MOCVD as the preferred technology for creating and manufacturing photonic devices. Professor Dapkus, along with his colleagues Professor Dupuis, Dr. H. Manasevit and Professor JJ Coleman are widely considered to be the leading pioneers in the development of the MOCVD technique. Dapkus group at Rockwell International was the first to report lasing in AlGaAs/GaAs double heterostructures at room temperature in 1977. This work along with their demonstration of multiple quantum well laser diodes in the 1978 has led to MOCVD becoming the dominant technique for the production of laser diodes and LEDs, along with other key photonic devices. As a Professor at USC, Dapkus lab investigated MOCVD fundamental growth mechanisms and selective area growth employing MOCVD. His lab made pioneering contributions to the technology of long-distance fiber optic lasers, ultra-low threshold datacom lasers, vertical cavity surface emitting lasers and photonic integrated circuits. In particular this work led to strained quaternary quantum wells became the preferred design in 1.3 and 1.55 micron laser diodes. The MOCVD technology and the quantum well material designs that were demonstrated with it now are dominant in the fabrication of devices for fiber optic systems, data communications, facial recognition, space solar cells, solid state lighting and cell phone amplifiers.