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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morgan, Katrina Anne
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Expanding the transmission window of visible-MWIR chalcogenide glasses by silicon nitride doping
- 2023Conformal CVD-grown MoS2 on three-dimensional woodpile photonic crystals for photonic bandgap engineeringcitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2021Manufacturing of GLS-Se glass rods and structured preforms by extrusion for optical fiber drawing for the IR regioncitations
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019High-throughput physical vapour deposition flexible thermoelectric generatorscitations
- 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writing
- 2017Structural modification of Ga-La-S glass for a new family of chalcogenidescitations
- 2017Wafer scale pre-patterned ALD MoS2 FETs
- 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
- 2017Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memorycitations
- 2016Forming-free resistive switching of tunable ZnO films grown by atomic layer depositioncitations
- 2016Advanced CVD technology for emerging transition metal di-chalcogenides
- 2014The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devicescitations
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document
The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
Abstract
TiN/HfO<sub>x</sub>/TiN resistive RAM (RRAM) devices have been fabricated where the hafnium oxide layer has been deposited at three different temperatures via atomic layer deposition (ALD). Material characterization shows the structure of the hafnium oxide is converted from cubic to monoclinic for 400 degrees C. Elemental analysis shows that the temperature affects the stoichiometric behavior of hafnium oxide, with a higher oxygen concentration at 350 degrees C and above. The switching behavior differs significantly for each device whereby the 400 degrees C device shows no successful switching, due to the change in structure to monoclinic. The two lower temperatures both show successful bipolar switching which set at negative voltages. The 300 degrees C device has a higher R<sub>off</sub>/R<sub>on</sub> of 13.9, with superior endurance. The 350 degrees C device has a lower R<sub>off</sub>/R<sub>on</sub> of 5.5 and shows deterioration in switching properties as the number of cycles are increased. At 300 degrees C, the oxygen hafnium ratio is at a minimum; hence the greatest amount of oxygen vacancies are present, which results in improved switching characteristics. This supports the theory that oxygen vacancies play a key role in the switching mechanism for metal oxide RRAM devices.