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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jiang, Nian
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2013Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimizationcitations
- 2013III-V semiconductor nanowires for optoelectronic device applicationscitations
- 2012Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowirescitations
- 2012Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
- 2012Long minority carrier lifetime in Au-catalyzed GaAs/Al xGa 1-xAs core-shell nanowirescitations
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document
III-V semiconductor nanowires for optoelectronic device applications
Abstract
<p>III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τ<sub>nr</sub>/(τ<sub>nr</sub>+τ<sub>r</sub>), where τ<sub>nr</sub> is the non-radiative lifetime and τ<sub>r</sub> is the radiative lifetime of minority carriers in the nanowires is necessary for device applications. Due to the large surface area to volume ratio in the nanowires, non-radiative recombination associated with surface states often results in low quantum efficiency. The quantum efficiency of the nanowires can be increased either by increasing τ<sub>nr</sub> or by reducing τ<sub>r</sub>. We present experimental results on these two different approaches to increase the quantum efficiency of semiconductor nanowires.</p>