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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bahri, Mounib
University of Liverpool
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Phase-selective recovery and regeneration of end-of-life electric vehicle blended cathodes via selective leaching and direct recyclingcitations
- 2024Radiation Effects in Uranium Nitride and Zirconium Nitride
- 2024Superionic lithium transport via multiple coordination environments defined by two-anion packingcitations
- 2023Phase-selective recovery and regeneration of end-of-life electric vehicle blended cathodes via selective leaching and direct recyclingcitations
- 2022MOF-Derived Multi-heterostructured Composites for Enhanced Photocatalytic Hydrogen Evolution: Deciphering the Roles of Different Componentscitations
- 2022A Pyrene-4,5,9,10-Tetraone-Based Covalent Organic Framework Delivers High Specific Capacity as a Li-Ion Positive Electrodecitations
- 2021An in situ investigation of the thermal decomposition of metal-organic framework NH2-MIL-125 (Ti)citations
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2020Phase selective synthesis of nickel silicide nanocrystals in molten salts for electrocatalysis of the oxygen evolution reactioncitations
- 2019Bimetallic Phosphide (Ni,Cu) 2 P Nanoparticles by Inward Phosphorus Migration and Outward Copper Migrationcitations
- 2019Bimetallic Phosphide (Ni,Cu) 2 P Nanoparticles by Inward Phosphorus Migration and Outward Copper Migrationcitations
- 2019Kinked silicon nanowires: Superstructures by metal assisted chemical etchingcitations
- 2019Kinked Silicon Nanowires: Superstructures by Metal-Assisted Chemical Etchingcitations
- 2019Bringing Conducting Polymers to High Order: Toward Conductivities beyond 10 5 S cm −1 and Thermoelectric Power Factors of 2 mW m −1 K −2citations
- 2016Thermal Management of Monolithic Versus Heterogeneous Lasers Integrated on Siliconcitations
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
Places of action
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article
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut
Abstract
Here we clarify the central role of the miscut during group III-V/group IV crystal growth. We show that the miscut impacts the initial antiphase domain distribution, with two distinct nucleation-driven (miscut typically >1°) and terraces-driven (miscut typically <0.1°) regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.