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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Belabbes, Abderrezak
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Topics
Publications (6/6 displayed)
- 2021Design Aspects of Doped CeO2 for Low-Temperature Catalytic CO Oxidation: Transient Kinetics and DFT Approach
- 2020Cu, Sm co-doping effect on the CO oxidation activity of CeO2. A combined experimental and density functional studycitations
- 2018Efficient green emission from wurtzite Al x In 1-x P nanowirescitations
- 2017Spin-Orbitronics at Transition Metal Interfacescitations
- 2016k-asymmetric spin splitting at the interface between transition metal ferromagnets and heavy metalscitations
- 2012Direct experimental determination of the spontaneous polarization of GaNcitations
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article
Direct experimental determination of the spontaneous polarization of GaN
Abstract
We present a universal approach for determining the spontaneous polarization P<SUB>sp</SUB> of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing microphotoluminescence and cathodoluminescence spectroscopy, we observe emission lines from the intrinsic and extrinsic stacking faults in strain-free GaN microcrystals. By treating the polarization sheet charges associated with these stacking faults as a plate capacitor, P<SUB>sp</SUB> can be obtained from the observed transition energies with no additional assumptions. Self-consistent Poisson-Schrödinger calculations, aided by the microscopic electrostatic potential computed using density-functional theory, lead to nearly identical values for P<SUB>sp</SUB>. Our recommended value for P<SUB>sp</SUB> of GaN is -0.022±0.007 C/m<SUP>2</SUP>....