| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hourahine, Benjamin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2019Collapsed carbon nanotubes : from nano to mesoscale via density functional theory-based tight-binding objective molecular modelingcitations
- 2019Collapsed carbon nanotubescitations
- 2018Dislocation contrast in electron channelling contrast images as projections of strain-like componentscitations
- 2017Coherent control of plasmons in nanoparticles with nonlocal responsecitations
- 2016Reprint of
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscopecitations
- 2010Theoretical modelling of rare Earth dopants in GaNcitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2007Efficient tight-binding approach for the study of strongly correlated systemscitations
- 2006Rare earth doped III-nitrides for optoelectronicscitations
- 2006Hydrogen molecules and platelets in germaniumcitations
Places of action
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article
Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range
Abstract
Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.