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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cimalla, Volker
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Absorption and birefringence study for reduced optical losses in diamond with high nitrogen-vacancy concentrationcitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applicationscitations
- 2022Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates
- 2021Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carrierscitations
- 2021Coalescence aspects of III-nitride epitaxycitations
- 2021Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation networkcitations
- 2018Metallization design investigations for graphene as a virtually massless electrode material for 2.1 GHz solidly mounted (BAW-SMR) resonatorscitations
- 2017Wettability investigations and wet transfer enhancement of large-area CVD-Graphene on aluminum nitridecitations
- 2016Electrostatic self-assembly of diamond nanoparticles onto Al- and N-polar sputtered aluminum nitride surfacescitations
- 2016Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and watercitations
- 2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTscitations
- 2010Elastic properties of nanowirescitations
- 2010Investigation of stress in AIN thin films for piezoelectric MEMS
- 2009Determination of the composition of In(x)Ga(1-x)N from strain measurementscitations
- 2009Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3 ; Bandabstand, elektronische Struktur und Elektronenakkumulation an der Oberfläche von kubischem und rhomoedrischem In2O3citations
- 2005New route of nanowire integration in microfabrication processes for sensor applications
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article
Absorption and birefringence study for reduced optical losses in diamond with high nitrogen-vacancy concentration
Abstract
<jats:p>The use of diamond colour centres such as the nitrogen-vacancy (NV) centre is increasingly enabling quantum sensing and computing applications. Novel concepts like cavity coupling and readout, laser-threshold magnetometry and multi-pass geometries allow significantly improved sensitivity and performance via increased signals and strong light fields. Enabling material properties for these techniques and their further improvements are low optical material losses via optical absorption of signal light and low birefringence. Here, we study systematically the behaviour of absorption around 700 nm and birefringence with increasing nitrogen- and NV-doping, as well as their behaviour during NV creation via diamond growth, electron beam irradiation and annealing treatments. Absorption correlates with increased nitrogen doping yet substitutional nitrogen does not seem to be the direct absorber. Birefringence reduces with increasing nitrogen doping. We identify multiple crystal defect concentrations via absorption spectroscopy and their changes during the material processing steps and thus identify potential causes of absorption and birefringence as well as strategies to fabricate chemical vapour deposition diamonds with high NV density yet low absorption and low birefringence.</jats:p><jats:p>This article is part of the Theo Murphy meeting issue ‘Diamond for quantum applications’.</jats:p>