• Egyenes, Fridrich

Abstract

<jats:title>Abstract</jats:title><jats:p>Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, a wide-bandgap semiconductor material, offers a great potential for power and high-voltage electronic devices. We report on the growth of undoped <jats:italic>α</jats:italic>- and <jats:italic>β</jats:italic>-phase Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> using liquid-injection metal-organic chemical vapor deposition (LI-MOCVD) on sapphire substrates. Using the same precursor (gallium acetylacetonate) and deposition temperature of 700 °C, the phase selection was controlled by the sapphire substrate orientation, where the growth of <jats:italic>α</jats:italic>- and <jats:italic>β</jats:italic>-phase Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> was achieved on <jats:italic>m</jats:italic>- and <jats:italic>c</jats:italic>-plane surface, respectively. As deduced from x-ray diffraction, <jats:italic>α</jats:italic>-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films show epitaxial character, while <jats:italic>β</jats:italic>- Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films exhibit highly textured structure. Oxygen flow was also found to have a strong impact on the phase purity of <jats:italic>α</jats:italic>-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> for the flow rates examined. Optical and electrical properties of the layers grown at different oxygen flow rates were also studied systematically. LI-MOCVD growth of <jats:italic>α</jats:italic>-phase Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layers at relatively high deposition temperature widens the high-temperature processing of the Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>-based electronic and optoelectronic devices.</jats:p>

Topics

• surface
• phase
• x-ray diffraction
• Oxygen
• semiconductor
• chemical vapor deposition
• Gallium