| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Walker, Marc
University of Warwick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024High-throughput combinatorial analysis of the spatiotemporal dynamics of nanoscale lithium metal platingcitations
- 2024Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2024Silane functionalization of graphene nanoplatelets
- 2023Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on siliconcitations
- 2023Electronic band offset determination of oxides grown by atomic layer deposition on siliconcitations
- 2023From graphene to graphene oxide: the importance of extended topological defectscitations
- 2023Data for Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2022Electronic characteristics of ultra‐thin passivation layers for silicon photovoltaicscitations
- 2022Polymer-tethered glyconanoparticle colourimetric biosensors for lectin binding : structural and experimental parameters to ensure a robust outputcitations
- 2022Understanding the interaction of organic corrosion inhibitors with copper at the molecular scale : benzotriazole on Cu(110)citations
- 2022Screening surface structure–electrochemical activity relationships of copper electrodes under CO2 electroreduction conditionscitations
- 2021Understanding the interaction of organic corrosion inhibitors with copper at the molecular scale:benzotriazole on Cu(110)citations
- 2021Investigation of the preparation and reactivity of metal-organic frameworks of cerium and pyridine-2,4,6-tricarboxylatecitations
- 2020Structures of mixed manganese ruthenium oxides ((Mn_{1−x}Ru_x)O_2) crystallised under acidic hydrothermal conditionscitations
- 2020Data for Atomic level termination for passivation and functionalisation of silicon surfaces
- 2020The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatmentcitations
- 2020Evolution of Non-metallic Inclusions Through Processing in Ti-V Microalloyed 316L and Al-V Microalloyed 17-4PH Stainless Steels for Hipping Applicationscitations
- 2020Atomic level termination for passivation and functionalisation of silicon surfacescitations
- 2019Stabilizing Silver Window Electrodes for Organic Photovoltaics Using a Mercaptosilane Monolayer
- 2019Data for Exceptional surface passivation arising from bis(trifluoromethanesulfonyl)-based solutions
- 2019Durability and wear resistance of laser-textured hardened stainless steel surfaces with hydrophobic propertiescitations
- 2019Effect of HCl cleaning on InSb–Al<sub>2</sub>O<sub>3</sub> MOS capacitorscitations
- 2018Elucidating the Exceptional Passivation Effect of 0.8 nm Evaporated Aluminium on Transparent Copper Filmscitations
- 2018Elucidating the Exceptional Passivation Effect of 0.8 nm Evaporated Aluminium on Transparent Copper Films
- 2018Cs1−xRbxSnI3 light harvesting semiconductors for perovskite photovoltaicscitations
- 2018Cs 1-: X Rb x SnI 3 light harvesting semiconductors for perovskite photovoltaicscitations
- 2017Electrochemical maps and movies of the hydrogen evolution reaction on natural crystals of molybdenite (MoS2)citations
- 2017In-situ catalytic upgrading of heavy oil using dispersed bionanoparticles supported on gram-positive and gram-negative bacteriacitations
- 2017Elucidating the role of the hole-extracting electrode on the stability and efficiency of inverted CsSnI3 / C60 perovskite photovoltaicscitations
- 2016Surface passivation of semiconducting oxides by self-assembled nanoparticlescitations
- 2016A Synthetic Route for the Effective Preparation of Metal Alloy Nanoparticles and Their Use as Active Electrocatalystscitations
- 2016‘Grafting to’ of RAFTed responsive polymers to glass substrates by thiol-ene and critical comparison to thiol-gold couplingcitations
- 2015Structural, optical and vibrational properties of self-assembled Pbn+1(Ti1−xFex)nO3n+1−δ Ruddlesden-Popper superstructurescitations
- 2014Pinning effect on the band gap modulation of crystalline BexZn1−xO alloy films grown on Al2O3 (0001)citations
- 2014Pinning effect on the band gap modulation of crystalline Be x Zn 1 - x O alloy films grown on Al 2 O 3 (0001)
- 2014Weak mismatch epitaxy and structural feedback in graphene growth on copper foilcitations
- 2013Weak mismatch epitaxy and structural feedback in graphene growth on copper foilcitations
Places of action
| Organizations | Location | People |
|---|
article
Effect of HCl cleaning on InSb–Al<sub>2</sub>O<sub>3</sub> MOS capacitors
Abstract
<jats:title>Abstract</jats:title><jats:p>In this work, the role of HCl treatments on InSb surfaces and InSb–Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl<jats:sub>3</jats:sub> which is not present for similar HCl-water processes. Furthermore, this InCl<jats:sub>3</jats:sub> layer desorbs from the surface between 200 °C and 250 °C. Metal–oxide–semiconductor capacitors were fabricated using atomic layer deposition of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> at 200 °C and 250 °C and the presence of InCl<jats:sub>3</jats:sub> was associated with a +0.79 V flatband voltage shift. The desorption of the InCl<jats:sub>3</jats:sub> layer at 250 °C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (<jats:italic>D</jats:italic><jats:sub>it</jats:sub>) and hysteresis voltage (<jats:italic>V</jats:italic><jats:italic><jats:sub>H</jats:sub></jats:italic>). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.</jats:p>