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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nandi, Sanjoy
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2023Thermal transport in metal-NbOx-metal cross-point devices and its effect on threshold switching characteristicscitations
- 2023Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristorscitations
- 2020Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxidescitations
- 2020Electric Field- And Current-Induced Electroforming Modes in NbO x citations
- 2018Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantationcitations
- 2015Effect of electrode roughness on electroforming in HfO2 and defect-induced moderation of electric-field enhancementcitations
- 2014The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx filmscitations
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article
Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantation
Abstract
<p>Implantation of Hf films with oxygen ions is shown to be an effective means of fabricating high-quality HfO<sub>2</sub>/HfO <sub>x</sub> heterostructures at room temperature, with the layer composition and thicknesses determined by the ion energy and fluence. Implantation with 3 keV O<sup>+</sup> ions to a fluence of 1 × 10<sup>17</sup> ions cm<sup>-2</sup> produces a polycrystalline (monoclinic-) HfO<sub>2</sub> layer extending from the surface to a depth of ∼12 nm, and an underlying graded HfO <sub>x</sub> layer extending an additional ∼7 nm, while implantation with 6 keV O to a similar fluence produces a near-stoichiometric surface layer of 7 nm thickness and a graded substoichiometric layer extending to depth of ∼30 nm. These structures are shown to be broadly consistent with oxygen range data but more detailed comparison with dynamic Monte Carlo simulations suggests that the near-surface region contains more oxygen than expected from collisional processes alone. The bandgap and dielectric strength of the HfO<sub>2</sub> layer produced by 3 keV; 1 × 10<sup>17</sup> ions cm<sup>-2</sup> implant is shown to be indistinguishable from those of an amorphous film deposited by atomic layer deposition at 200 °C. The utility of these layers is demonstrated by studying the resistive switching properties of metal-oxide-metal test structures fabricated by depositing a top metal contact on the implanted film. These results demonstrate the suitability of ion-implantation for the synthesis of functional oxide layers at room temperature.</p>