| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Simanjuntak, Firman Mangasa
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Forming-free and non-linear resistive switching in bilayer HfOx/TaOx memory devices by interface-induced internal resistancecitations
- 2024Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealingcitations
- 2022Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processingcitations
- 2022Effects of surface polarity on the structure and magnetic properties of epitaxial h-YMnO3 thin films grown on MgO substratescitations
- 2021Practical approach to induce analog switching behavior in memristive devices: digital-to-analog transformationcitations
- 2021Crafting the multiferroic BiFeO3-CoFe2O4 nanocomposite for next-generation devices: a reviewcitations
- 2021Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applicationscitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devicescitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicescitations
- 2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layercitations
- 2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellcitations
Places of action
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article
Crafting the multiferroic BiFeO3-CoFe2O4 nanocomposite for next-generation devices: a review
Abstract
BiFeO3-CoFe2O4 (BFO-CFO) vertically aligned nanocomposite (VAN) thin-film promises great potentials for next-generation electronic devices. Its strong magnetoelectric, antiferromagnetic-ferrimagnetic, and structural couplings occur via large interface area interactions across the vertical surface between BFO and CFO phases; this leads to emergent exotic fundamental physics rendering its potential applications for various electronics, such as magnetic sensor, data storages or memory devices, and energy harvesting devices. The distinctive photoactivity of both BFO and CFO phases in the BFO-CFO VAN system also can generate advanced applications as photovoltaic and photocatalytic devices. Furthermore, owing to small overpotential and excellent stability in alkaline media, BFO-CFO nanocomposites becomes the next electrode in electrocatalysis devices. The BFO-CFO VAN also have been exponentially developed having various type of thin-film architectures grown on various substrates. In this present article, we review the current status of the BFO-CFO VAN thin-film and discuss the fundamental understanding as well as the technology involved in developing this material. We also address the challenges that hinder the commercialization of this material and propose some plausible solutions to encourage BFO-CFO VAN-based electronic devices to reach their maturity level. Furthermore, the potential marketability of the BFO-CFO VAN materials and devices for future consumer products is also discussed.