| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Coinon, Christophe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022GAP(111)B-SE Surface for TMD epitaxial growth
- 2022In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxycitations
- 2022Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral responsecitations
- 2021Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wellscitations
- 2020Engineering a Robust Flat Band in III–V Semiconductor Heterostructurescitations
- 2019InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation currentcitations
- 2018Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperaturecitations
- 2017V-shaped InAs/Al<sub>0.5</sub>Ga<sub>0.5</sub>Sb vertical tunnel FET on GaAs (001) substrate with I<sub>ON</sub>=433 µA.µm<sup>-1</sup> at V<sub>DS</sub>= 0.5Vcitations
- 2017V-shaped InAs/Al 0.5 Ga 0.5 Sb vertical tunnel FET on GaAs (001) substrate with I ON =433 µA.µm -1 at V DS = 0.5Vcitations
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article
Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral response
Abstract
For short wave infrared (SWIR) sensing, InGaAs is the leading technology combining high carrier mobility, high homogeneity and complete control over n-top doping. In the meanwhile, numerous alternative materials have tried to compete with InGaAs. Among them, colloidal nanocrystals with narrow band gap can address the current issue in designing cost-effective sensors for the SWIR range. Rather than pitting these two materials against each other, here we design a synergistic duo in which HgTe nanocrystals are used to broaden the spectral range of InGaAs while lifting the lattice matching constraints. We propose a diode geometry where a p-type HgTe NC array is coupled with n-type InGaAs wires which are used as high mobility (µ>1000 cm 2 .V-1 s-1) minority carrier extractors. This approach also demonstrates that Van der Waals heterostructures are not limited to graphene-like materials and that bulk-like III-V semiconductors can also be light sensitized by colloidal nanoparticles. This work paves the way toward further synergies between epitaxially grown and colloidally grown semiconductors for infrared detection.