| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vennéguès, Philippe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024High-temperature dust formation in carbon-rich astrophysical environmentscitations
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2024Low-Temperature Epitaxy of Fe 3 O 4 Thin Films on ZnO(0001) and Related Interface Studies ; Épitaxie à basse température de films minces de Fe₃O₄ sur ZnO(0001) et études associées de l'interface
- 2022CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growthcitations
- 2022On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientationscitations
- 2022Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BNcitations
- 2021Microstructure of epitaxial Mg3N2 thin films grown by MBEcitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2012On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substratescitations
Places of action
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article
Microstructure of epitaxial Mg3N2 thin films grown by MBE
Abstract
<jats:p>The epitaxial growth of Mg3N2 thin films by molecular beam epitaxy has been recently achieved. This work presents the structural properties of the films, including grain sizes and lattice rotations, as assessed by x-ray diffraction and transmission electron microscopy. The films’ microstructure consists of well-aligned columnar grains 10 nm in diameter that nucleate at the film/substrate interface and display a significant column twist, in the order of 2.5°. As growth proceeds, tilted and twisted mosaic blocks overgrow these columns, as observed in many other epitaxial semiconductors. Yet, the rocking curves on symmetric reflections display extremely narrow peaks (∼50 arc sec), revealing a long-range spatial correlation between structural defects that should not be mistakenly considered a proof of high crystalline quality.</jats:p>