| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khorani, Edris
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2023Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin filmscitations
- 2023Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on siliconcitations
- 2023Electronic band offset determination of oxides grown by atomic layer deposition on siliconcitations
- 2023SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cellscitations
- 2023Data for Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2023Hafnium oxide : a thin film dielectric with controllable etch resistance for semiconductor device fabricationcitations
- 2022Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulatorscitations
- 2022Electronic characteristics of ultra‐thin passivation layers for silicon photovoltaicscitations
- 2022Light scattering from black silicon surfaces and its benefits for encapsulated solar cellscitations
- 2020Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cellscitations
- 2019Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopycitations
- 2018Metal-assisted chemically etched black silicon for crystalline silicon solar cells
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article
Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells
Abstract
Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key challenges for this technology to be deployed industrially and to pave the way for adoption in tandem configurations. Here, we report the first account of silicon nitride (SiNx) nanolayers with electronic properties suitable for effective hole-selective contacts. We use x-ray photoemission methods to investigate ultra-thin SiNx grown via atomic layer deposition, and we find that the band alignment determined at the SiNx/Si interface favors hole transport. A band offset ratio, ΔEC/ΔEV, of 1.62 ± 0.24 is found at the SiNx/Si interface for the as-grown films. This equates to a 500-fold increase in tunneling selectivity for holes over electrons, for a film thickness of 3 nm. However, the thickness of such films increases by 2 Å–5 Å within 48 h in cleanroom conditions, which leads to a reduction in hole-selectivity. X-ray photoelectron spectroscopy depth profiling has shown this film growth to be linked to oxidation, and furthermore, it alters the ΔEC/ΔEV ratio to 1.22 ± 0.18. The SiNx/Si interface band alignment makes SiNx nanolayers a promising architecture to achieve widely sought hole-selective passivating contacts for high efficiency silicon solar cells.<br/>