693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Makkonen, Ilja
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2022A combined experimental and theoretical study of small and large vacancy clusters in tungstencitations
- 2020Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnxcitations
- 2020Segregation of Ni at early stages of radiation damage in NiCoFeCr solid solution alloyscitations
- 2020Ti-Sr antisitecitations
- 2020Ti-Sr antisite : An abundant point defect in SrTiO3citations
- 2020Source/Drain Materials for Ge nMOS Devices : Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnxcitations
- 2020Source/Drain Materials for Ge nMOS Devicescitations
- 2019Evolution of phosphorus-vacancy clusters in epitaxial germaniumcitations
- 2019Ga vacancies and electrical compensation in beta-Ga2O3 thin films studied with positron annihilation spectroscopycitations
- 2019Heavily phosphorus doped germanium:Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activationcitations
- 2019Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopycitations
- 2017Positron annihilation analysis of the atomic scale changes in oxidized Zircaloy-4 samplescitations
- 2016Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductorscitations
- 2016Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germaniumcitations
- 2015Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspectscitations
- 2007Modeling momentum distributions of positron annihilation radiation in solids ; Positroniannihilaatiosäteilyn liikemääräjakaumat kiinteissä aineissa: elektronirakenneohjelmiin perustuva mallinnuscitations
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article
Ti-Sr antisite
Abstract
<p>We present a systematic study of the positron lifetime as a function of measurement temperature in strontium titanate (</p><p>SrTiO 3) single crystals grown in different conditions and by different synthesis methods. We combine our experimental results with state-of-the-art theoretical calculations of positron annihilation parameters. We find that the essentially omnipresent 180-190ps lifetime component is most likely the</p><p>Ti</p><p>Sr antisite defect, possibly coupled with one or more oxygen vacancies, supporting the importance of the</p><p>Ti</p><p>Sr antisite related defects in</p><p>SrTiO 3.</p>