• Greer, Frank
• Tao, Jun
• Orvis, Thomas
• Xu, Yunpeng
• Chae, Hyun Uk
• Kale, Salil
• Kapadia, Rehan
• Sideris, Constantine
• Sarkar, Debarghya

Abstract

<jats:p>In this Letter, we report the direct growth of single crystal III–V thin film mesas on amorphous SiO2 on Si using templated liquid phase growth. Unlike previous works, where crystal sizes demonstrated have been less than ∼10 μm, here, we show that by tuning the crystal growth conditions, crystals with dimensions greater than 100 μm and of high electron mobility can be directly grown on oxides. Specifically, InAs-on-oxide with mobilities reaching 5100 cm2/V s at 100 K, and ∼3200 cm2/V s at room temperature has been demonstrated. The excellent electronic performance is due to the single crystallinity of the grown material and creates new avenues for the monolithic direct integration of high-performance materials on non-epitaxial substrates, including silicon, and amorphous substrates, such as glasses and metals.</jats:p>

Topics

• impedance spectroscopy
• single crystal
• amorphous
• mobility
• thin film
• glass
• glass
• laser emission spectroscopy
• Silicon
• crystallinity
• liquid phase