| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Walker, Marc
University of Warwick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024High-throughput combinatorial analysis of the spatiotemporal dynamics of nanoscale lithium metal platingcitations
- 2024Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2024Silane functionalization of graphene nanoplatelets
- 2023Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on siliconcitations
- 2023Electronic band offset determination of oxides grown by atomic layer deposition on siliconcitations
- 2023From graphene to graphene oxide: the importance of extended topological defectscitations
- 2023Data for Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2022Electronic characteristics of ultra‐thin passivation layers for silicon photovoltaicscitations
- 2022Polymer-tethered glyconanoparticle colourimetric biosensors for lectin binding : structural and experimental parameters to ensure a robust outputcitations
- 2022Understanding the interaction of organic corrosion inhibitors with copper at the molecular scale : benzotriazole on Cu(110)citations
- 2022Screening surface structure–electrochemical activity relationships of copper electrodes under CO2 electroreduction conditionscitations
- 2021Understanding the interaction of organic corrosion inhibitors with copper at the molecular scale:benzotriazole on Cu(110)citations
- 2021Investigation of the preparation and reactivity of metal-organic frameworks of cerium and pyridine-2,4,6-tricarboxylatecitations
- 2020Structures of mixed manganese ruthenium oxides ((Mn_{1−x}Ru_x)O_2) crystallised under acidic hydrothermal conditionscitations
- 2020Data for Atomic level termination for passivation and functionalisation of silicon surfaces
- 2020The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatmentcitations
- 2020Evolution of Non-metallic Inclusions Through Processing in Ti-V Microalloyed 316L and Al-V Microalloyed 17-4PH Stainless Steels for Hipping Applicationscitations
- 2020Atomic level termination for passivation and functionalisation of silicon surfacescitations
- 2019Stabilizing Silver Window Electrodes for Organic Photovoltaics Using a Mercaptosilane Monolayer
- 2019Data for Exceptional surface passivation arising from bis(trifluoromethanesulfonyl)-based solutions
- 2019Durability and wear resistance of laser-textured hardened stainless steel surfaces with hydrophobic propertiescitations
- 2019Effect of HCl cleaning on InSb–Al<sub>2</sub>O<sub>3</sub> MOS capacitorscitations
- 2018Elucidating the Exceptional Passivation Effect of 0.8 nm Evaporated Aluminium on Transparent Copper Filmscitations
- 2018Elucidating the Exceptional Passivation Effect of 0.8 nm Evaporated Aluminium on Transparent Copper Films
- 2018Cs1−xRbxSnI3 light harvesting semiconductors for perovskite photovoltaicscitations
- 2018Cs 1-: X Rb x SnI 3 light harvesting semiconductors for perovskite photovoltaicscitations
- 2017Electrochemical maps and movies of the hydrogen evolution reaction on natural crystals of molybdenite (MoS2)citations
- 2017In-situ catalytic upgrading of heavy oil using dispersed bionanoparticles supported on gram-positive and gram-negative bacteriacitations
- 2017Elucidating the role of the hole-extracting electrode on the stability and efficiency of inverted CsSnI3 / C60 perovskite photovoltaicscitations
- 2016Surface passivation of semiconducting oxides by self-assembled nanoparticlescitations
- 2016A Synthetic Route for the Effective Preparation of Metal Alloy Nanoparticles and Their Use as Active Electrocatalystscitations
- 2016‘Grafting to’ of RAFTed responsive polymers to glass substrates by thiol-ene and critical comparison to thiol-gold couplingcitations
- 2015Structural, optical and vibrational properties of self-assembled Pbn+1(Ti1−xFex)nO3n+1−δ Ruddlesden-Popper superstructurescitations
- 2014Pinning effect on the band gap modulation of crystalline BexZn1−xO alloy films grown on Al2O3 (0001)citations
- 2014Pinning effect on the band gap modulation of crystalline Be x Zn 1 - x O alloy films grown on Al 2 O 3 (0001)
- 2014Weak mismatch epitaxy and structural feedback in graphene growth on copper foilcitations
- 2013Weak mismatch epitaxy and structural feedback in graphene growth on copper foilcitations
Places of action
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article
The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
Abstract
Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts.