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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Billet, Maximilien
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Topics
Publications (3/3 displayed)
- 2022Gallium phosphide-on-insulator integrated photonic structures fabricated using micro-transfer printingcitations
- 2021Gallium phosphide transfer printing for integrated nonlinear photonics
- 2019InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation currentcitations
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article
InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation current
Abstract
<jats:p>We present a metallic mirror-based resonant cavity-enhanced InAlAs/InGaAs metal-semiconductor-metal (InAlAs/InGaAs-MSM) photodetector driven by a 1550 nm wavelength illumination. The device shows a quantum efficiency higher than 30%, a cut-off frequency higher than 100 GHz, and a saturation current density above 40 kA/cm2. As a proof of concept, we demonstrate the generation of 0.25 mW of continuous wave output power at a frequency of 100 GHz via the photomixing of an optical beatnote. This result underlines the potential of InAlAs/InGaAs-MSM for subterahertz and terahertz optoelectronic applications driven by telecom lasers.</jats:p>