| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lazarov, Vlado K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Origin of reduced magnetization and domain formation in small magnetite nanoparticlescitations
- 2024Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3citations
- 2024Characterization of composition dependence of properties of a MgNiO-based MSM structure
- 2022Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSicitations
- 2022Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSicitations
- 2019Effective modelling of the Seebeck coefficient of Fe2VAlcitations
- 2019Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contactscitations
- 2018Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devicescitations
- 2017Origin of reduced magnetization and domain formation in small magnetite nanoparticlescitations
- 2017Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3citations
- 2016Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)citations
- 2016Polar Spinel-Perovskite Interfacescitations
- 2016Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111):Co2FeSi0.5Al0.5/Ge(111)citations
- 2016Atomic and electronic structure of twin growth defects in magnetitecitations
- 2016The role of chemical structure on the magnetic and electronic properties of Co2FeAl0.5Si0.5/Si(111) interfacecitations
- 2016Experimental and density functional study of Mn doped Bi2Te3 topological insulatorcitations
- 2014Atomic-scale structure and properties of highly stable antiphase boundary defects in Fe3O4citations
Places of action
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article
Experimental and density functional study of Mn doped Bi2Te3 topological insulator
Abstract
We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure show that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and<br/>Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS show that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.<br/>