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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Okhay, O.
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Topics
Publications (11/11 displayed)
- 2019Tuning electrical and thermoelectric properties of freestanding graphene oxide papers by carbon nanotubes and heat treatmentcitations
- 2018Mechanical strain engineering of dielectric tunability in polycrystalline SrTiO3 thin filmscitations
- 2016Thin film versus paper-like reduced graphene oxide: Comparative study of structural, electrical, and thermoelectrical propertiescitations
- 2015Drastic modification of graphene oxide properties by incorporation of nickel: a simple inorganic chemistry approachcitations
- 2013Conductivity enhancement and resistance changes in polymer films filled with reduced graphene oxidecitations
- 2013Electrical conductivity of LTA-zeolite in the presence of poly(vinyl alcohol) and poly(vinyl pyrrolidone) polymerscitations
- 2011Enhancement of tetragonality and role of strontium vacancies in heterovalent doped SrTiO.sub.3./sub.citations
- 2011Role of trivalent Sr substituents and Sr vacancies in tetragonal and polar states of SrTiO3citations
- 2011Role of trivalent Sr substituents and Sr vacancies in tetragonaland polar states of SrTiO.sub.3./sub.citations
- 2011Enhancement of tetragonality and role of strontium vacancies in heterovalent doped SrTiO3citations
- 2008High dielectric constant and tunability of strontium titanate ceramics modified by chromium dopingcitations
Places of action
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article
Thin film versus paper-like reduced graphene oxide: Comparative study of structural, electrical, and thermoelectrical properties
Abstract
We report fabrication of reduced graphene oxide (rGO) films using chemical reduction by hydrazine hydrate and rGO paper-like samples using low temperature treatment reduction. Structural analysis confirms the formation of the rGO structure for both samples. Current-voltage (I-V) measurements of the rGO film reveal semiconductor behavior with the maximum current value of similar to 3 x 10(-4) A. The current for the rGO paper sample is found to be, at least, one order of magnitude higher. Moreover, bipolar resistance switching, corresponding to memristive behavior of type II, is observed in the I-V data of the rGO paper. Although precise values of the rGO film conductivity and the Seebeck coefficient could not be measured, rGO paper shows an electrical conductivity of 6.7 x 10(2)S/m and Seebeck coefficient of -6 mu V/degrees C. Thus, we demonstrate a simplified way for the fabrication of rGO paper that possesses better and easier measurable macroscopic electrical properties than that of rGO thin film. Published by AIP Publishing.