| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morales, M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Direct-methane anode-supported solid oxide fuel cells fabricated by aqueous gel-castingcitations
- 2023Direct-methane anode-supported solid oxide fuel cells fabricated by aqueous gel-castingcitations
- 2023Development of Fe2O3/YSZ ceramic plates for cryogenic operation of resistive-protected gaseous detectorscitations
- 2023Hydrogen-rich gas production by steam reforming and oxidative steam reforming of methanol over La[sub]0.6sr[sub]0.4CoO[sub]3-d: effects of preparation, operation conditions, and redox cyclescitations
- 2019Reversible operation performance of microtubular solid oxide cells with a nickelate-based oxygen electrodecitations
- 2018Enhanced Performance of Gadolinia-Doped Ceria Diffusion Barrier Layers Fabricated by Pulsed Laser Deposition for Large-Area Solid Oxide Fuel Cellscitations
- 2016Spark plasma sintered Si3N4/TiN nanocomposites obtained by a colloidal processing routecitations
- 2016Spark Plasma Sintered Si3N4/TiN Nanocomposites Obtained by a Colloidal Processing Routecitations
- 2015Structural analysis of strained LaVO 3 thin filmscitations
- 2015XAFS investigations of Y-Ti-enriched nanometric oxides in ODS ferritic steels after neutron irradiation in Experimental Reactors
- 2015Effect of bombarding steel with Xe+ ions on the surface nanostructure and on pulsed plasma nitriding processcitations
- 2014Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistorscitations
- 2013The effect of noble gas bombarding on nitrogen diffusion in steelcitations
- 2013Structure and magnetism of epitaxial PrVO 3 filmscitations
- 2013Effect of Xe+ ion bombardment induced patterns in stainless steel on plasma nitriding processes
- 2013Effects of ion-beam bombardment and nitridation on physical/mechanical properties of 100Cr6 TiN coated steels
- 2013Analysis of wavelength influence on a-Si crystallization processes with nanosecond laser sourcescitations
- 2013Influence of the structure and composition of titanium nitride substrates on carbon nanotubes grown by chemical vapour depositioncitations
- 2012Manufacturing of anode-supported tubular solid oxide fuel cells by a new shaping technique using aqueous gel-castingcitations
- 2011Corrosion mitigation of buried structures by soils modification
- 2005Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
- 2005Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputteringcitations
- 2004Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
Places of action
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article
Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors
Abstract
We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.