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Streit, Stephan
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article
Reduced leakage current in BiFeO3 thin films with rectifying contacts
Abstract
<p>BiFeO<sub>3</sub> thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present letter, we show that only the growth rate of the BiFeOv<sub>3</sub> films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.</p>