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Barreto, Jorge
University of Bristol
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020An integrated optical modulator operating at cryogenic temperaturescitations
- 2019An integrated cryogenic optical modulator
- 2019An integrated cryogenic optical modulator
- 2019First cryogenic electro-optic switch on silicon with high bandwidth and low power tunabilitycitations
- 2013DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitorscitations
- 2013DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitorscitations
- 2012Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantationcitations
- 2012Resolving the ultrafast dynamics of charge carriers in nanocompositescitations
- 2007Comparative study between silicon-rich oxide films obtained by LPCVD and PECVDcitations
- 2006Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor depositioncitations
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article
Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition
Abstract
Field effect induced luminescence has been achieved by alternate tunnel injection of electrons and holes into Si nanocrystals. The emitting device is a metal-oxide-semiconductor structure with a semitransparent polycrystalline Si contact ∼250 nm thick and a silicon-rich silicon oxide layer of about 40 nm deposited on a p-type Si substrate by plasma-enhanced chemical vapor deposition. The electroluminescence is optimized for a Si excess of 17% and annealing at 1250 °C for 1 h in nitrogen-rich atmosphere. The pulsed emission presents typical decay times of ∼5 μs and external quantum efficiencies of ∼0.03%.