| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Furdyna, J. K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2012Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity bandcitations
- 2008Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductorscitations
- 2005Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors
- 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon couplingcitations
- 2004Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1-xMnxV heterostructurescitations
- 2004Determination of hole-induced ferromagnetic Mn-Mn exchange in p-type Zn1-xMnxTe by inelastic neutron scatteringcitations
- 2004Determination of hole-induced ferromagnetic exchange between nearest-neighbor Mn spins in p-type Zn1-xMnxTe
- 2004Electronic effects determining the formation of ferromagnetic III 1-xMnx V alloys during epitaxial growthcitations
- 2004Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAscitations
- 2003Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scatteringcitations
- 2003Curie temperature limit in ferromagnetic Ga1-xMnxAs
- 2003Ferromagnetic III-Mn-V semiconductors
- 2002Growth and optical properties of Mn-containing II-VI quantum dots
- 2002Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profilingcitations
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document
Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors
Abstract
We have demonstrated that in ferromagnetic III <sub>1-x</sub>Mn <sub>x</sub>V semiconductor alloys grown by low temperature molecular beam epitaxy technique, a substantial fraction of the Mn atoms reside in interstitial positions (Mn <sub>1</sub>). The Mn <sub>1</sub> lower the Curie temperature by electrically compensating Mn <sub>Ga</sub> acceptors and reducing magnetically active spins. Through a series of experiments that involve varying the film thickness, low temperature annealing, co-doping with Be, as well as modulation doped Al <sub>1-y</sub>Ga <sub>y</sub>As/Ga <sub>1-x</sub>Mn <sub>x</sub>As/Al <sub>1-y</sub>Ga <sub>y</sub>As heterostructures, we established that the fraction of Mn intersititials present in the thin film is governed by the Fermi level during the growth process itself. This Fermi-level-induced Mn interstitial formation effect imposes an upper limit to the T <sub>C</sub> of III <sub>1-x</sub>Mn <sub>x</sub>V alloys. © 2005 American Institute of Physics.