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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Swain, M. V.
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Topics
Publications (10/10 displayed)
- 2012A method to determine site-specific, anisotropic fracture toughness in biological materialscitations
- 2009Nanoindentation of ion-implanted crystalline germaniumcitations
- 2009Effect of microstructure upon elastic behaviour of human tooth enamelcitations
- 2008Thickness-dependent phase transformation in nanoindented germanium thin filmscitations
- 2004Phase transformations induced in relaxed amorphous silicon by indentation at room temperaturecitations
- 2003In situ electrical characterization of phase transformations in Si during indentationcitations
- 2003Topographical analysis of the structural, biochemical and dynamic biomechanical properties of cartilage in an ovine model of osteoarthritiscitations
- 2002In-situ electrical characterization of Si during nanoindentation
- 2001Mechanical deformation in silicon by micro-indentationcitations
- 2000Transmission electron microscopy observation of deformation microstructure under spherical indentation in siliconcitations
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article
Phase transformations induced in relaxed amorphous silicon by indentation at room temperature
Abstract
<p>The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical nanoindentation in both relaxed (annealed) and unrelaxed (as-implanted) a-Si. Interestingly, phase transformations were clearly observed in the relaxed state, with the load-unload curves from these samples displaying characteristic discontinuities and cross-sectional transmission electron microscopy images indicating the presence of high-pressure crystalline phases Si-III and Si-XII following pressure release. Thus, an amorphous to crystalline phase transformation has been induced by indentation at room temperature. In contrast, no evidence of a phase transformation was observed in unrelaxed a-Si, which appeared to deform via plastic flow of the amorphous phase. Furthermore, in situ electrical measurements clearly indicate the presence of a metallic Si phase during loading of relaxed a-Si but no such behavior was observed for unrelaxed a-Si</p>