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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mardare, Cc
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Publications (6/6 displayed)
- 2005Bottom electrode crystallization of Pb(Zr, Ti)O-3 thin films made by RF magnetron sputteringcitations
- 2004Bottom electrode crystallization method for heat treatments on thin filmscitations
- 2003Barium metaplumbate thin film electrodes for ferroelectric devicescitations
- 2003Simple method for crystallizing ceramic thin films using platinum bottom electrodes as resistive heating elementscitations
- 2003Pulsed laser deposition of barium metaplumbate thin films for ferroelectric capacitorscitations
- 2003Deposition of bioactive glass-ceramic thin-films by RF magnetron sputteringcitations
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article
Bottom electrode crystallization method for heat treatments on thin films
Abstract
A simple method for crystallizing amorphous thin films was developed using platinum bottom electrodes as heating elements. A current was applied to tungsten wires in contact with the platinum and the temperature was measured using a type-K thermocouple. A proportional feedback algorithm was used for controlling the process. The performance of different platinum electrodes was studied. Pt films with different thicknesses were alternatively deposited over Ti and Zr at 700degreesC. Applying currents up to 2 A to the Pt films, the resistance dependence of temperature was studied. The maximum temperature, 675degreesC, was obtained when using 200 nm Pt films deposited at 700degreesC over Ti, with a power consumption of 16 W. The method was applied to the crystallization of PbZr0.52Ti0.48O3 thin films using Pt films deposited at 500degreesC over Ti and at 700degreesC over Zr. The results obtained for heat treatments at 650degreesC with 10degreesC/s heating and cooling rates showed a pure perovskite phase; the ferroelectric properties were comparable with those from films crystallized by rapid thermal annealing. (C) 2004 American Institute of Physics.