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Aziz, M. J.
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article
Enhanced nitrogen incorporation by pulsed laser annealing of GaN xAs1-x formed by N ion implantation
Abstract
We demonstrate that pulsed laser annealing followed by rapid thermal annealing greatly enhances incorporation of substitutional N in N <sup>+</sup>-implanted GaAs. Films implanted to 1.8% N exhibit a fundamental band gap of 1.26 eV (a band gap reduction of 160 meV), corresponding to an N activation efficiency of 50%. The optical and crystalline quality of the synthesized film is comparable to GaN<sub>x</sub>As<sub>1-x</sub> thin films of similar composition grown by epitaxial growth techniques. Compared to films produced by N<sup>+</sup> implantation and rapid thermal annealing only, the introduction of pulsed laser annealing improves N incorporation by a factor of 5. Moreover, we find that the synthesized films are thermally stable up to an annealing temperature of 950°C. © 2002 American Institute of Physics.