| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ristoscu, Carmen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2023Bioglass and Vitamin D3 Coatings for Titanium Implants: Osseointegration and Corrosion Protectioncitations
- 2017Human plasma fibronectin potentialization of the in vitro and in vivo osteogenic activity of BMPs onto hydroxyapatite coatings with a focus on BMP-6
- 2016Pulsed Laser-Deposited TiO2-based Films: Synthesis, Electronic Structure and Photocatalytic Activitycitations
- 2011Detection of Charge Density Wave Ground State in Granular Thin Films of Blue Bronze K0.3MoO3 by femtosecond spectroscopycitations
- 2003Optical emission spectroscopy and time-of-flight investigations of plasmas generated from AlN targets in cases of pulsed laser deposition with sub-ps and ns ultraviolet laser pulsescitations
- 2001Role of laser pulse duration and gas pressure in deposition of AlN thin filmscitations
Places of action
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article
Role of laser pulse duration and gas pressure in deposition of AlN thin films
Abstract
<jats:p>We investigated the relative merits and limits of pulsed laser deposition from AlN targets in vacuum and low-pressure nitrogen in obtaining stoichiometric and crystalline aluminum nitride thin films. We used two UV excimer laser sources (λ=248 nm): a nanosecond system (τFWHM=30 ns) and, a subpicosecond (τFWHM=450 fs) system. The obtained structures were characterized by x-ray diffraction, electron microscopy in cross section, selected area electron diffraction, and profilometry. We demonstrated that the best results are obtained with the sub-ps laser source in vacuum and in low pressure nitrogen when the AlN thin films are very pure, crystalline, clearly exhibiting a tendency to epitaxy. Metallic Al is present in the films deposited with the ns laser source. We believe this is an effect of the gradual decomposition of AlN inside the crater on the target surface under multipulse laser irradiation.</jats:p>