| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Huang, Ruomeng
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Electrodeposition of bismuth, tellurium and bismuth telluride through sub-10 nm mesoporous silica thin filmscitations
- 2022Tungsten(VI) selenide tetrachloride, WSeCl 4 - synthesis, properties, coordination complexes and application of [WSeCl 4 (SenBu 2 )] for CVD growth of WSe 2 thin filmscitations
- 2021Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTecitations
- 2021Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTecitations
- 2021Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]citations
- 2021Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]citations
- 2020Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solutioncitations
- 2020Poly(N-isopropylacrylamide) based thin microgel films for use in cell culture applicationscitations
- 2020Selective chemical vapor deposition approach for Sb2Te3 thin film micro-thermoelectric generatorscitations
- 2020Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour depositioncitations
- 2020Improved thermoelectric performance of Bi 2 Se 3 alloyed Bi 2 Te 3 thin films via low pressure chemical vapour depositioncitations
- 2019Electrochemical metallization ReRAMs (ECM) - Experiments and modellingcitations
- 2018Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodepositioncitations
- 2018Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bathcitations
- 2017Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memorycitations
- 2016Forming-free resistive switching of tunable ZnO films grown by atomic layer depositioncitations
- 2016Nanoscale arrays of antimony telluride single crystals by selective chemical vapor depositioncitations
- 2015Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivitycitations
- 2015Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memorycitations
- 2015Phase-change memory properties of electrodeposited Ge-Sb-Te thin filmcitations
- 2014The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devicescitations
- 2013Non-aqueous electrodeposition of metals and metalloids from halometallate saltscitations
- 2013Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexescitations
- 2013Telluroether and selenoether complexes as single source reagents for low pressure chemical vapor deposition of crystalline Ga2Te3 and Ga2Se3 thin filmscitations
- 2012Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursorscitations
Places of action
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article
Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition
Abstract
We have recently reported a new method for electrodeposition of thin film and nanostructured phase change memory (PCM) devices from a single, highly tuneable, non-aqueous electrolyte. The quality of the material was confirmed by phase cycling via electrical pulsed switching of both 100 nm nano-cells and thin film devices. This method potentially allows deposition into extremely small confined cells down to less than 5 nm, 3D lay-outs that require non-line-of-sight techniques, and seamless integration of integrated selector devices. As electrodeposition requires a conducting substrate, the key condition for electronic applications based on this method is the use of patterned metal lines as the working electrode during the electrodeposition process. In this paper we show design and fabrication of a 2D passive memory matrix in which the word lines act as the working electrode and nucleation site for the growth of confined cells of Ge-Sb-Te. We will discuss the precursor requirement for deposition from non-aqueous, weakly coodinating solvents, show transmission electron microscopy analysis of the electrodeposition growth process and elemental distribution in the deposits, and the fabrication and characterisation of the Ge-Sb-Te memory matrix.