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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Uddin, Ashraf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2022Increased Efficiency of Organic Solar Cells by Seeded Control of the Molecular Morphology in the Active Layercitations
- 2017Controlled Ostwald ripening mediated grain growth for smooth perovskite morphology and enhanced device performancecitations
- 2017Interfacial engineering of hole transport layers with metal and dielectric nanoparticles for efficient perovskite solar cellscitations
- 2016Analysis of burn-in photo degradation in low bandgap polymer PTB7 using photothermal deflection spectroscopycitations
- 2016Effect of blend composition on ternary blend organic solar cells using a low band gap polymercitations
- 2015Effect of blend composition on binary organic solar cells using a low band gap polymercitations
- 2014Enhancement of ternary blend organic solar cell efficiency using PTB7 as a sensitizercitations
Places of action
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article
Interfacial engineering of hole transport layers with metal and dielectric nanoparticles for efficient perovskite solar cells
Abstract
<p>In this work, we have demonstrated the incorporation of metal (Ag NPs) and dielectric nanoparticles (SiO<sub>2</sub> NPs) into the hole transporting layers of inverted PSCs using facile deposition methods. Interfacial engineering in PSCs is accomplished by incorporating 50 nm Ag NPs or SiO<sub>2</sub> NPs within the PEDOT:PSS interlayer. Dielectric SiO<sub>2</sub> NPs were used for comparison purposes as a control sample to isolate morphological impacts without plasmonic effects. The photovoltaic performance of the devices significantly improved due to increased charge selectivity and enhanced charge collection properties across the interface (HTL). The recombination resistance of the SiO<sub>2</sub> NP incorporated HTL based PSCs was 193% higher than that of the conventional devices. In-depth analysis using impedance measurements revealed that devices containing Ag or SiO<sub>2</sub> NPs have low electrode polarization and consequently lower charge accumulation at the interface. Lower electrode polarization in the modified devices was also found to improve the charge carrier selectivity, which eventually led to enhanced fill factor and lower parasitic resistances. Interfacial engineering via NPs yielded improvements in the electrical characteristics of non-optical origin, which not only enhanced device performance, but also reduced the hysteresis effects to much lower than in the conventional inverted PSCs based on a pristine PEDOT:PSS interlayer.</p>