| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ou, Haiyan
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Topics
Publications (17/17 displayed)
- 2023Novel Photonic Applications of Silicon Carbidecitations
- 2017Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3citations
- 2017Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3citations
- 2017Low Temperature Photoluminescence of 6H fluorescent SiC
- 2016Electrically driven surface plasmon light-emitting diodes
- 2016Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization
- 2016Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2citations
- 2016Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2citations
- 2015A new type of white light-emitting diode light source basing on fluorescent SiC
- 2015A new type of white light-emitting diode light source basing on fluorescent SiC
- 2013Doping and stability of 3C-SiC: from thinfilm to bulk growth
- 2012Fluorescent SiC as a new material for white LEDscitations
- 2012Crystal growth and characterization of fluorescent SiC
- 2008Ge nanoclusters in PECVD-deposited glass caused only by heat treatmentcitations
- 2007Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiationcitations
- 2006Strained silicon as a new electro-optic materialcitations
- 2004GE NANOCLUSTERS IN PLANAR GLASS WAVEGUIDES DEPOSITED BY PECVD
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article
Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
Abstract
Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) films, resulting in a significant enhancement of the PL intensity (up to 689%). The effect of thickness, annealing temperature, annealing duration and precursor purge time on the PL intensity of ALD Al<sub>2</sub>O<sub>3</sub> films was investigated. In order to investigate the penetration depth and passivation effect in porous SiC, the samples were characterized by X-ray photoelectron spectroscopy (XPS) and time-resolved PL. The optimized passivation conditions (20 nm Al<sub>2</sub>O<sub>3</sub> deposited at 160 °C with purge time of 20 s, followed by an annealing for 5 min at 350 °C) for porous SiC were achieved and the results indicate that surface passivation by ALD Al<sub>2</sub>O<sub>3</sub> thin films is a very effective method to enhance the luminescence efficiency of porous SiC.