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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Volz, Kerstin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
- 2024A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructurescitations
- 2023Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductorscitations
- 2023Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holdercitations
- 2022Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling
- 2022Advanced Analytical Characterization of Interface Degradation in Ni-Rich NCM Cathode Co-Sintered with LATP Solid Electrolytecitations
- 2021Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cyclingcitations
- 2021Reaction of Li1.3Al0.3Ti1.7(PO4)3 and LiNi0.6Co0.2Mn0.2O2 in co-sintered composite cathodes for solid-state batteriescitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2017GaAs 1-x Bi x /GaN y As 1-y type-II quantum wells:novel strain-balanced heterostructures for GaAs-based near- & mid-infrared photonicscitations
- 2017GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonicscitations
- 2016Optical gain in GaAsBi/GaAs quantum well diode laserscitations
- 2014Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristorscitations
- 2010MOVPE growth of III-V solar cells on silicon in 300 mm closed coupled showerhead reactor
Places of action
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article
Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors
Abstract
<p>Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO<sub>3</sub> memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size. (Graph Presented).</p>