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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Brammertz, Guy
General Electric (Finland)
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 2024Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenizationcitations
- 2024Interfacial Metal Chlorides as a Tool to Enhance Charge Carrier Dynamics, Electroluminescence, and Overall Efficiency of Organic Optoelectronic Devices
- 2024Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2by Tungsten Selenization.citations
- 2024Design and synthesis of novel p-type TCOs: From computational screening towards film deposition
- 2023Ge-alloyed kesterite thin-film solar cells: previous investigations and current status – a comprehensive reviewcitations
- 2023Ultrasonic spray coating of kesterite CZTS films from molecular inkscitations
- 2023Organic- inorganic nanoparticle composite as an electron injection/hole blocking layer in organic light emitting diodes for large area lighting applicationscitations
- 2023Controlled li alloying by postsynthesis electrochemical treatment of Cu 2 ZnSn(S, Se) 4 absorbers for solar cellscitations
- 2022Relevance of Ge incorporation to control the physical behaviour of point defects in kesteritecitations
- 2021Comparative study of Al2O3 and HfO2 for surface passivation of Cu(In,Ga)Se2 thin-films: An innovative Al2O3/HfO2 multi-stack designcitations
- 2021Comparative Study of Al2O3 and HfO2 for Surface Passivation of Cu(In,Ga)Se-2 Thin Films: An Innovative Al2O3/HfO2 Multistack Designcitations
- 2021A multi-stack Al2O3/HfO2 design with contact openings for front surface of Cu(In,Ga)Se-2 solar cellscitations
- 2021Revealing the electronic structure, heterojunction band offset and alignment of Cu2ZnGeSe4: a combined experimental and computational study towards photovoltaic applicationscitations
- 2020Electrical characterization of Cu2ZnSnSe4 solar cells from selenization of sputtered metal layerscitations
- 2020Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stackscitations
- 2020Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric Layerscitations
- 2020How Trace Analytical Techniques Contribute to the Research and Development of Ge and III/V Semiconductor Devicescitations
- 2020Selective Area Growth of InP and Defect Elimination on Si (001) Substratescitations
- 2020Selective area growth of high quality InP on Si (001) substratescitations
- 2020Preparation of micro flake ink for low cost printing of CIS-Se absorber layers
- 2020GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxidecitations
- 2020Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit
- 2020Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substratescitations
- 2020Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substratescitations
- 2019A Study of the Degradation Mechanisms of Ultra Thin CIGS Solar Cells Submitted to a Damp Heat Environment
- 2019Crystallization properties of Cu2ZnGeSe4citations
- 2017Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cellscitations
- 2016Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cellscitations
- 2016Effect of Cu content and temperature on the properties of Cu2ZnSnSe4 solar cells
- 2015Effect of selenium content of CuInSex alloy nanopowder precursors on recrystallization of printed CuInSe2 absorber layers during selenization heat treatmentcitations
- 2015Selenization of printed Cu-In-Se alloy nanopowder layers for fabrication of CuInSe2 thin film solar cellscitations
- 2015Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cellscitations
- 2015Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigationscitations
- 2014Mechanical synthesis of high purity Cu-In-Se alloy nanopowder as precursor for printed CISe thin film solar cellscitations
- 2014Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cellscitations
- 2013Electrical characterization of Cu2ZnSnSe4 solar cells from selenization of sputtered metal layerscitations
- 2011Experimental and Modeling on Atomic Layer Deposition Al<sub>2</sub>O<sub>3</sub>/n-InAs Metal-Oxide-Semiconductor Capacitors with Various Surface Treatmentscitations
- 2011GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxidecitations
- 2011Selective area growth of InP and defect elimination on Si (001) substratescitations
- 2010Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substratescitations
- 2009Thermal and plasma enhanced atomic layer deposition of Al2O3 on GaAs substrates
Places of action
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article
Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2by Tungsten Selenization.
Abstract
Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to their desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells to date are fabricated in a nonscalable fashion, with exfoliated materials, due to the lack of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer WSe2 films by selenizing prepatterned tungsten with either solid-source selenium at 900 °C or H2Se precursors at 650 °C. Both methods yield photovoltaic-grade, wafer-scale WSe2 films with a layered van der Waals structure and superior characteristics, including charge carrier lifetimes up to 144 ns, over 14* higher than those of any other large-area TMD films previously demonstrated. Simulations show that such carrier lifetimes correspond to 22% power conversion efficiency and 64 W g-1 specific power in a packaged solar cell, or 3 W g-1 in a fully packaged solar module. The results of this study could facilitate the mass production of high-efficiency multilayer WSe2 solar cells at low cost.