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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Briscoe, Joe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response.
- 2024Strain Heterogeneity and Extended Defects in Halide Perovskite Devicescitations
- 2024Strain Heterogeneity and Extended Defects in Halide Perovskite Devices.
- 2022Controlled Porosity in Ferroelectric BaTiO₃ Photoanodes
- 2022Overcoming nanoscale inhomogeneities in thin-film perovskites via exceptional post-annealing grain growth for enhanced photodetectioncitations
- 2021Robust inorganic hole transport materials for organic and perovskite solar cells : insights into materials electronic properties and device performancecitations
- 2019ZnO nanowires for solar cells: a comprehensive reviewcitations
- 2018Carbon-Nanodot Solar Cells from Renewable Precursors
- 2017Avoiding ambient air and light induced degradation in high-efficiency polymer solar cells by the use of hydrogen-doped zinc oxide as electron extraction materialcitations
- 2017Filtration effects of graphene nanoplatelets in resin infusion processes: Problems and possible solutionscitations
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article
Strain Heterogeneity and Extended Defects in Halide Perovskite Devices
Abstract
Strain is an important property in halide perovskite semiconductors used for optoelectronic applications because of its ability to influence device efficiency and stability. However, descriptions of strain in these materials are generally limited to bulk averages of bare films, which miss important property-determining heterogeneities that occur on the nanoscale and at interfaces in multilayer device stacks. Here, we present three-dimensional nanoscale strain mapping using Bragg coherent diffraction imaging of individual grains in Cs0.1FA0.9Pb(I0.95Br0.05)3 and Cs0.15FA0.85SnI3 (FA = formamidinium) halide perovskite absorbers buried in full solar cell devices. We discover large local strains and striking intragrain and grain-to-grain strain heterogeneity, identifying distinct islands of tensile and compressive strain inside grains. Additionally, we directly image dislocations with surprising regularity in Cs0.15FA0.85SnI3 grains and find evidence for dislocation-induced antiphase boundary formation. Our results shine a rare light on the nanoscale strains in these materials in their technologically relevant device setting.