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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Calmeiro, Tomás
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Observation of Grain Boundary Passivation and Charge Distribution in Perovskite Films Improved with Anti-solvent Treatmentcitations
- 2021Highly conductive grain boundaries in copper oxide thin films
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Mapping the space charge carrier dynamics in plasmon-based perovskite solar cellscitations
- 2018Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivitycitations
- 2017Oxide-Based Solar Cellcitations
- 2016Stress Induced Mechano-electrical Writing-Reading of Polymer Film Powered by Contact Electrification Mechanismcitations
- 2016Influence of the Substrate on the Morphology of Self-Assembled Silver Nanoparticles by Rapid Thermal Annealingcitations
- 2016Highly conductive grain boundaries in copper oxide thin filmscitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
Places of action
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article
Oxide-Based Solar Cell
Abstract
<p>A ZnO/Cu<sub>2</sub>O-based combinatorial heterojunction device library was successfully fabricated by a simple spray pyrolysis technique using ITO-coated glass as the substrate. The combinatorial approach was introduced to analyze the impact of the ZnO and Cu<sub>2</sub>O layer thicknesses on the performance of the solar cells. The thickness of the ZnO layer was varied from ∼50 to 320 nm, and the Cu<sub>2</sub>O layer was deposited orthogonal to the ZnO thickness gradient. In the case of Cu<sub>2</sub>O, the thickness varied from ∼200 to 800 nm. The photovoltaic performance of the cells is strongly dependent on the absorber layer thickness for a particular window layer thickness and reaches a maximum short-circuit current density of 3.9 mA/cm<sup>2</sup> when the absorber layer thickness just crosses ∼700 nm. Reducing the thicknesses of the active layers leads to a sharp decrease in the device performance. It is shown that the entire built-in bias of the heterojunction is created in the absorber layer due to low carrier density. The poor performance of the devices having lower thicknesses is attributed to different interfacial phenomena such as optical losses due to the thin Cu<sub>2</sub>O layer, back-contact recombination of the carriers due to the low layer thickness because a minimum heterojunction thickness is required for the formation of the full built-in bias that slows down the recombination of the carriers, and other factors.</p>