| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khan, Sabbir A.
Danish National Metrology Institute
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2023Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowirescitations
- 2023Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowirescitations
- 2020Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfacescitations
- 2020Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structurecitations
- 2019Enhanced Tunneling in a Hybrid of Single-Walled Carbon Nanotubes and Graphenecitations
- 2018Field effect enhancement in buffered quantum nanowire networkscitations
- 2018Field effect enhancement in buffered quantum nanowire networkscitations
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article
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces
Abstract
<p>Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.</p>