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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zeman, Miro
Delft University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2023Stable passivation of cut edges in encapsulated n-type silicon solar cells using Nafion polymercitations
- 2022Introducing a comprehensive physics-based modelling framework for tandem and other PV systemscitations
- 2022Raman spectroscopy of silicon with nanostructured surfacecitations
- 2022Thermal Stable High-Efficiency Copper Screen Printed Back Contact Solar Cellscitations
- 2022Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interfacecitations
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2021On current collection from supporting layers in perovskite/c-Si tandem solar cellscitations
- 2020Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contactscitations
- 2020Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO x/Poly-Si Passivating Contactscitations
- 2019High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:Hcitations
- 2019Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layercitations
- 2018Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cellscitations
- 2017Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cellscitations
- 2017Electron tomography analysis of 3D interfacial nanostructures appearing in annealed Si rich SiC filmscitations
- 2017New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopycitations
- 2017Design and comparison of a 10-kW interleaved boost converter for PV application using Si and SiC devicescitations
- 2016TEM analysis of multilayered nanostructures formed in the rapid thermal annealed silicon rich silicon oxide film
- 2014Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films
- 2014Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se-2 solar cellscitations
- 2009Structural properties of amorphous silicon prepared from hydrogen diluted silanecitations
- 2000Challenges in amorphous silicon solar cell technology
Places of action
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article
Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO x/Poly-Si Passivating Contacts
Abstract
<p>In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultrathin SiOx/poly-Si, the appropriate implementation of transparent conductive oxide (TCO) layers is of vital importance. Considerable deterioration in passivation quality occurs for thin poly-Si-based devices owing to the sputtering damage during TCO deposition. Curing treatment at temperatures above 350 °C can recover such degradation, whereas the opto-electrical properties of the TCO are affected as well, and the carrier transport at the poly-Si/TCO contact is widely reported to degrade severely in such a procedure. Here, we propose straightforward approaches, post-deposition annealing at 400 °C in nitrogen, hydrogen, or air ambience, are proposed to tailor material properties of high-mobility hydrogenated fluorine-doped indium oxide (IFO:H) film. Structural, morphological, and opto-electrical properties of the IFO:H films are investigated as well as their inherent electron scattering and doping mechanisms. Hydrogen annealing treatment proves to be the most promising strategy. The resulting layer exhibits both optimal opto-electrical properties (carrier density = 1.5 × 1020 cm-3, electron mobility = 108 cm2 V-1 s-1, and resistivity = 3.9 × 10-4 ω cm) and remarkably low contact resistivities (∼20 mω cm2 for both n- and p-contacts) in poly-Si solar cells. Even though the presented cells are limited by the metallization step, the obtained IFO:H-base solar cell show an efficiency improvement from 20.1 to 20.6% after specific hydrogen treatment, demonstrating the potential of material manipulation and contact engineering strategy in high-efficiency photovoltaic devices endowed with TCOs. </p>