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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ferreira, Rodrigo
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Publications (5/5 displayed)
- 2023Study of the surface roughness of a remanufactured bimetallic AISI 1045 and 316L SS part obtained by hybrid manufacturing (DED/HSM)citations
- 2022Bandlike Transport in FaPbBr3Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivitycitations
- 2022Exceptionally high work density of a ferroelectric dynamic organic crystal around room temperaturecitations
- 2021Effects of Laser Polishing on Surface Characteristics and Wettability of Directed Energy-Deposited 316L Stainless Steelcitations
- 2021Tool Feed and Burr Size Influence on Wettability of Ti6Al4V Micro End-Milled
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article
Bandlike Transport in FaPbBr3Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivity
Abstract
<p>Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere. Here, we explore an FAPbBr<sub>3</sub>perovskite quantum dot (QD) phototransistor with bandlike charge transport and measure a dark hole mobility of 14.2 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>at ambient atmosphere. Attaining both high mobility and good optical figures of merit, a detectivity of ∼10<sup>16</sup>Jones is achieved, which is a record for halide perovskite nanocrystals. Simple A-site salt (FABr) treatments offer a mechanism for connecting between perovskite QDs for better charge transfer in high-quality devices. All of these important properties are superior to most advanced inorganic semiconductor phototransistors, indicating a promising future in optoelectronic applications.</p>