| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jalkanen, Pasi
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Conversion of ALD CuO Thin Films into Transparent Conductive p-Type CuI Thin Filmscitations
- 2023Hydrogen isotope exchange experiments in high entropy alloy WMoTaNbVcitations
- 2022Irradiation Damage Independent Deuterium Retention in WMoTaNbVcitations
- 2022Atomic layer deposition of PbCl2, PbBr2 and mixed lead halide (Cl, Br, I) PbXnY2-n thin filmscitations
- 2022Atomic Layer Deposition of CsI and CsPbI3citations
- 2020Preparation and In vivo Evaluation of Red Blood Cell Membrane Coated Porous Silicon Nanoparticles Implanted with 155Tbcitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2019Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealingcitations
- 2019Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronicscitations
- 2016Electric and Magnetic Properties of ALD-Grown BiFeO3 Filmscitations
- 2016Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulsescitations
- 2016Nucleation and conformality of iridium and iridium oxide thin films grown by atomic layer depositioncitations
- 2007Critical temperature modification of low dimensional superconductors by spin dopingcitations
Places of action
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article
Electric and Magnetic Properties of ALD-Grown BiFeO3 Films
Abstract
<p>The magnetization and electric polarization in thin bismuth ferrite films (BFO) films have been under extensive study for high technological potential of single-phase multiferroic materials. Surpassing the antiferromagnetic nature and weak magneto-electric coupling of bulk BFO has required highly specialized substrates and epitaxial growth methods so far. Polycrystalline single-phase multiferroic BFO (50-500 nm thick) films were grown by atomic layer deposition (ALD) on technologically simple Pt/SiO2/Si substrates. The BFO films were found to exhibit strong saturating ferromagnetism and coercivity at temperatures ranging from cryogenic to room temperature even with 500 nm thick layers, a property which cannot be obtained with thick epitaxial films or bulk BFO. The magnetization mechanism was associated with magnetic domain wall dynamics and collapsing of the helimagnetic spin modulation. The electric properties were found to be strongly dependent on the film thickness. The film crystallization, composition, and chemical state have been analyzed by various techniques. The magnetic and ferroelectric properties were determined by using a SQUID magnetometer and a ferroelectricity tester. The results of the work indicate clearly that the ALD technique offers an efficient way for synthesis of polycrystalline BFO films and for tailoring their electromagnetic properties.</p>