| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Heil, T.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2021Chemical Vapor Deposition of Highly Conjugated, Transparent Boron Carbon Nitride Thin Filmscitations
- 2020Shine Bright Like a Diamond: New Light on an Old Polymeric Semiconductorcitations
- 2019Electrochemical Fixation of Nitrogen and Its Coupling with Biomass Valorization with a Strongly Adsorbing and Defect Optimized Boron-Carbon-Nitrogen Catalystcitations
- 2015Tailoring precursors for depositioncitations
- 2015Tailoring precursors for deposition:synthesis structure and thermal studies of cyclopentadienyl copper(I) isocyanide complexescitations
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article
Tailoring precursors for deposition
Abstract
We report here the synthesis and characterization of a family of copper(I) metal precursors based around cyclopentadienyl and isocyanide ligands. The molecular structure of the several complexes cyclopentadienyl-copper(I) isocyanide complexes have been unambiguously determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted the isopropyl isocyanide complex [(η<sup>5</sup>-C<sub>5</sub>H<sub>5</sub>)Cu(CN<sup>i</sup>Pr)] (<b>2a</b>) and the tert-butyl isocyanide complex [(η<sup>5</sup>-C<sub>5</sub>H<sub>5</sub>)Cu(CN<sup>t</sup>Bu)] (<b>2b</b>) as possible copper metal CVD precursors. Further modification of the precursors with variation of the substituents on the cyclopentadienyl ligand system (varying between H, Me, Et and iPr) have allowed the affect these changes would have on features such as stability, volatility and decomposition to be investigated. As part of this study the vapor pressures of the complexes [(η<sup>5</sup>-C<sub>5</sub>H<sub>5</sub>)Cu(CN<sup>t</sup>Bu)] (<b>2b</b>), [(η<sup>5</sup>-MeC<sub>5</sub>H<sub>4</sub>)Cu(CN<sup>t</sup>Bu)] (<b>3b</b>), [(η<sup>5</sup>-EtC<sub>5</sub>H<sub>4</sub>)Cu(CN<sup>t</sup>Bu)] (<b>4b</b>) and [(η<sup>5</sup>-iPrC<sub>5</sub>H<sub>4</sub>)Cu(CN<sup>t</sup>Bu)] (<b>5b</b>) over a 40-65 ºC temperature range have been determined.Low pressure chemical vapor deposition (LP-CVD) was employed using precursors <b>2a</b> and <b>2b</b>, to synthesize thin films of metallic copper on silicon, gold and platinum substrates, under an atmosphere of hydrogen (H<sub>2</sub>). Analysis of the thin films deposited onto both silicon and gold substrates at substrate temperatures of 180 °C and 300<sup> o</sup>C, by SEM and AFM reveal temperature dependent growth features: Films grown at 300 oC are continuous and pin hole free, whereas those films grown at 180 <sup>o</sup>C consist of highly crystalline nanoparticles. In contrast, deposition onto platinum substrates at 180 <sup>o</sup>C show a high degree of surface coverage with the formation of high density, continuous pin hole free thin films. Powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic copper.