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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Blachut, Gregory
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2020Spatial Control of the Self-assembled Block Copolymer Domain Orientation and Alignment on Photopatterned Surfacescitations
- 2017Directed Self-Assembly and Pattern Transfer of Five Nanometer Block Copolymer Lamellaecitations
- 2017Generating Large Thermally Stable Marangoni-Driven Topography in Polymer Films by Stabilizing the Surface Energy Gradientcitations
- 2016A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymerscitations
- 2016Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymerscitations
- 2016Synthesis and characterization of Si-containing block co-polymers with resolution beyond 10 nmcitations
- 2014A photochemical approach to directing flow and stabilizing topography in polymer filmscitations
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article
A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymers
Abstract
<p>The directed self-assembly (DSA) of a 20 nm full-pitch silicon-containing block copolymer (BCP), poly(4-methoxystyrene-b-4-trimethylsilylstyrene), was performed using a process that produces shallow topography for hybrid chemo-/grapho-epitaxy. This hybrid process produced DSA with fewer defects than the analogous conventional chemo-epitaxial process, and the resulting DSA was also more tolerant of variations in process parameters. Cross-sectional scanning transmission electron microscopy (STEM) with electron energy loss spectroscopy (EELS) confirmed that BCP features spanned the entire film thickness on hybrid process wafers. Both processes were implemented on 300 mm wafers initially prepatterned by 193 nm immersion lithography, which is necessary for economic viability in high-volume manufacturing. Computational analysis of DSA extracted from top-down SEM images demonstrates the influence of process parameters on DSA, facilitating the optimization of guide stripe width, guide stripe pitch, and prepattern surface energy. This work demonstrates the ability of a hybrid process to improve the DSA quality over a conventional chemo-epitaxial process and the potential for high-volume manufacturing with high-χ, silicon-containing BCPs.</p>