| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shacham, Yosi
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2020Fracture strength and fatigue endurance in Gd-doped ceria thermal actuatorscitations
- 2019Femtosecond laser processing of ceria-based micro actuatorscitations
- 2018Towards fully polymeric electroactive micro actuators with conductive polymer electrodescitations
- 2012Nano-imprinting lithography of P(VDF-TrFE-CFE) for flexible freestanding MEMS devicescitations
- 2009Metallization technologies and strategies for plastic based biochips, sensors and actuators for healthcare and medical applicationscitations
- 2003Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallizationcitations
- 2003Structure of electroless deposited Co0.9W0.02P 0.08 thin films and their evolution with thermal annealingcitations
- 2003 The role of microstructure in nanocrystalline conformal Co 0.9 W 0.02 P 0.08 diffusion barriers for copper metallization citations
- 2002Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based filmscitations
- 2001Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallizationcitations
- 2001Characterization of electroless deposited Co (W,P) thin films for encapsulation of copper metallizationcitations
Places of action
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article
The role of microstructure in nanocrystalline conformal Co 0.9 W 0.02 P 0.08 diffusion barriers for copper metallization
Abstract
<p>Electroless deposition of diffusion barriers for Cu metallization is an attractive process as it is selective, deposits conformal films at a low temperature and enables seedless Cu deposition. We demonstrate electroless deposition of conformal, ultra-thin (∼10 nm thick) films of Co<sub>0.9</sub>W<sub>0.02</sub>P<sub>0.08</sub>. Electroless Co<sub>0.9</sub>W<sub>0.02</sub>P<sub>0.08</sub>is an effective barrier against Cu diffusion up to 450 °C as opposed to physical vapor deposited (PVD) Co, which is a poor barrier. In this study, the role of microstructure in determining the barrier properties is discussed. The microstructure of the as-deposited layers consists of nanocrystallites of hexagonal close-packed (hcp) Co and an amorphous CoWP component. The amorphous component crystallizes at approximately 290 °C to hcp Co. The orthorhombic Co<sub>2</sub>P phase nucleates at 420 °C, while the majority phase remains hcp Co. Since we have found that up to 450 °C there is no phase formation between Cu and the Co<sub>0.9</sub>W<sub>0.02</sub>P<sub>0.08</sub>film, we conclude that the mechanism of barrier failure is grain boundaries diffusion. The dependance of Cu grain boundary diffusivity on the microstructure is qualitatively demonstrated by comparing between electroless deposited Co<sub>0.9</sub>W<sub>0.02</sub>P<sub>0.08</sub>, Co<sub>0.9</sub>P<sub>0.1</sub>and PVD cobalt. Secondary ion mass spectrometry depth profile measurements were performed on the films after subjecting them to anneals at 400 °C resulting in type-C Cu grain boundary diffusion. The Cu diffusivity in the Co<sub>0.9</sub>W<sub>0.02</sub>P<sub>0.08</sub>film is lower than in Co<sub>0.9</sub>P<sub>0.1</sub>, and substantially lower than in PVD Co. The difference in Cu diffusivity is explained by varying degrees of grain boundaries' passivation due to the P and W alloying elements enriching the grain boundaries. This passivation effect is more pronounced in the Co<sub>0.9</sub>W<sub>0.02</sub>P<sub>0.08</sub>films.</p>